FDMS001N025DSD onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 25V 8PQFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 268+ | 77.25 грн |
Відгуки про товар
Написати відгук
Технічний опис FDMS001N025DSD onsemi
Description: MOSFET 2N-CH 25V 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete.
Інші пропозиції FDMS001N025DSD за ціною від 92.42 грн до 129.99 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS001N025DSD | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete |
на замовлення 34409 шт: термін постачання 21-31 дні (днів) |
|
||||
| FDMS001N025DSD | Виробник : ONSEMI |
Description: ONSEMI - FDMS001N025DSD - Dual-MOSFET, n-Kanal tariffCode: 85412900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 3Pin(s) Kanaltyp: n-Kanal euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Bauform - Transistor: TO-263AB Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: TUK SGACK902S Keystone Coupler SVHC: No SVHC (14-Jun-2023) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
|||||
| FDMS001N025DSD | Виробник : ON Semiconductor |
|
на замовлення 2970 шт: термін постачання 14-28 дні (днів) |
||||||
|
|
FDMS001N025DSD | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete |
товар відсутній |