FDMS015N04B onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 31.3A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8725 pF @ 20 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 88.44 грн |
| 6000+ | 81.96 грн |
Відгуки про товар
Написати відгук
Технічний опис FDMS015N04B onsemi
Description: MOSFET N-CH 40V 31.3A/100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8725 pF @ 20 V.
Інші пропозиції FDMS015N04B за ціною від 84.13 грн до 195.71 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS015N04B | Виробник : onsemi |
Description: MOSFET N-CH 40V 31.3A/100A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8725 pF @ 20 V |
на замовлення 11956 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
FDMS015N04B | Виробник : ON Semiconductor |
Trans MOSFET N-CH 40V 31.3A 8-Pin PQFN EP T/R |
товар відсутній |
|||||||||||||
 |
FDMS015N04B | Виробник : ON Semiconductor |
FDMS015N04B ON Semiconductor Transistors MOSFETs N-CH 40V 31.3A 8-Pin PQFN EP T/R - Arrow.com |
товар відсутній |
|||||||||||||
|
|
FDMS015N04B | Виробник : ON Semiconductor |
FDMS015N04B ON Semiconductor Transistors MOSFETs N-CH 40V 31.3A 8-Pin PQFN EP T/R - Arrow.com |
товар відсутній |
|||||||||||||
| FDMS015N04B | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Mounting: SMD Case: Power56 Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 118nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
 |
FDMS015N04B | Виробник : onsemi / Fairchild |
MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET |
товар відсутній |
|||||||||||||
| FDMS015N04B | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Mounting: SMD Case: Power56 Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 118nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET |
товар відсутній |