FDMS3006SDC onsemi

Description: POWER FIELD-EFFECT TRANSISTOR, 3, Input Capacitance (Ciss) (Max) @ Vds: 5725 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: Dual Cool™56, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 3.3W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.