FDMS3606AS ON Semiconductor / Fairchild

Description: MOSFET 2N-CH 30V 13A/27A POWER56, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: Power56, Vgs(th) (Max) @ Id: 2.7V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 13A, 27A, Drain to Source Voltage (Vdss): 30V.