Технічний опис FDMS3660AS ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 30V 13A/30A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 30A, Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.
Інші пропозиції FDMS3660AS
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FDMS3660AS | onsemi |
 Description: MOSFET 2N-CH 30V 13A/30A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
товару немає в наявності |
В кошику од. на суму грн. |
| FDMS3660AS | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/30A 8-Pin PQFN EP T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| FDMS3660AS |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
товару немає в наявності
В кошику
од. на суму грн.
| FDMS3660AS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 30V 13A/30A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/30A 8-Pin PQFN EP T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.