FDMS8023S onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 65.52 грн |
| 100+ | 43.72 грн |
| 500+ | 32.25 грн |
| 1000+ | 29.42 грн |
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Технічний опис FDMS8023S onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V, Power Dissipation (Max): 2.5W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V.
Інші пропозиції FDMS8023S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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FDMS8023S | onsemi |
Description: MOSFET N-CH 30V 26A/49A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
FDMS8023S | onsemi |
MOSFETs 30V N-Channel PowerTrench SyncFET |
товару немає в наявності |
В кошику од. на суму грн. |
| FDMS8023S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 On-state resistance: 3.3mΩ Mounting: SMD Pulsed drain current: 100A Power dissipation: 59W Gate charge: 57nC Polarisation: unipolar Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 |
товару немає в наявності |
В кошику од. на суму грн. |
| FDMS8023S |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMS8023S |
|
Виробник: onsemi
MOSFETs 30V N-Channel PowerTrench SyncFET
MOSFETs 30V N-Channel PowerTrench SyncFET
товару немає в наявності
В кошику
од. на суму грн.
| FDMS8023S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
On-state resistance: 3.3mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
On-state resistance: 3.3mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
товару немає в наявності
В кошику
од. на суму грн.