FDMS8025S onsemi
Виробник: onsemiDescription: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 37.81 грн |
| 6000+ | 35.34 грн |
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Технічний опис FDMS8025S onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.
Інші пропозиції FDMS8025S за ціною від 36.34 грн до 108.15 грн
| Фото | Назва | Виробник | Інформація |
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FDMS8025S | Виробник : Fairchild Semiconductor |
Description: MOSFET N-CH 30V 24A/49A 8PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
на замовлення 90979 шт: термін постачання 21-31 дні (днів) |
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FDMS8025S | Виробник : onsemi |
Description: MOSFET N-CH 30V 24A/49A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
на замовлення 35328 шт: термін постачання 21-31 дні (днів) |
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FDMS8025S | Виробник : onsemi / Fairchild |
MOSFETs 30V N-Channel PowerTrench SyncFET |
на замовлення 3830 шт: термін постачання 21-30 дні (днів) |
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FDMS8025S | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R |
товару немає в наявності |
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| FDMS8025S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A кількість в упаковці: 1 шт |
товару немає в наявності |
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| FDMS8025S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A |
товару немає в наявності |