Технічний опис FDMS8050 ON Semiconductor
Description: MOSFET N-CHANNEL 30V 55A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3V @ 750µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V.
Інші пропозиції FDMS8050
| Фото | Назва | Виробник | Інформація |
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FDMS8050 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 55A 8-Pin PQFN EP T/R |
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FDMS8050 | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 30V 55A 8-Pin PQFN EP T/R |
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| FDMS8050 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 400A; 156W; Power56 Polarisation: unipolar Kind of package: reel; tape Case: Power56 Mounting: SMD Power dissipation: 156W Gate charge: 285nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 30V Drain current: 200A On-state resistance: 0.9mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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FDMS8050 | Виробник : onsemi |
Description: MOSFET N-CHANNEL 30V 55A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
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FDMS8050 | Виробник : onsemi |
Description: MOSFET N-CHANNEL 30V 55A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
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FDMS8050 | Виробник : onsemi / Fairchild |
MOSFET PT8 N 30/20 in Powerclip 56 Single |
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| FDMS8050 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 400A; 156W; Power56 Polarisation: unipolar Kind of package: reel; tape Case: Power56 Mounting: SMD Power dissipation: 156W Gate charge: 285nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 30V Drain current: 200A On-state resistance: 0.9mΩ Type of transistor: N-MOSFET |
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