FDMS8090 ON Semiconductor

Description: MOSFET 2N-CH 100V 10A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V, Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (5x6), Power56.