FDMS8560S ON Semiconductor / Fairchild

Description: MOSFET N-CH 25V 30A/70A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 2.5W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).