FDMS86150ET100 onsemi / Fairchild
| Кількість | Ціна |
|---|---|
| 1+ | 392.18 грн |
| 10+ | 296.81 грн |
| 100+ | 236.29 грн |
| 500+ | 234.18 грн |
| 1000+ | 233.48 грн |
| 3000+ | 216.60 грн |
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Технічний опис FDMS86150ET100 onsemi / Fairchild
Description: MOSFET N-CH 100V 16A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V.
Інші пропозиції FDMS86150ET100 за ціною від 268.47 грн до 598.12 грн
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FDMS86150ET100 | Виробник : onsemi |
 Description: MOSFET N-CH 100V 16A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
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FDMS86150ET100 | Виробник : onsemi |
Description: MOSFET N-CH 100V 16A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |