FDMS86202ET120 ONSEMI
Виробник: ONSEMI
Description: ONSEMI - FDMS86202ET120 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDMS86202ET120 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
110+ | 331.02 грн |
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Технічний опис FDMS86202ET120 ONSEMI
Description: MOSFET N-CH 120V 13.5/102A PWR56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V.
Інші пропозиції FDMS86202ET120 за ціною від 194.94 грн до 440.07 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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FDMS86202ET120 | Виробник : onsemi / Fairchild | MOSFET 120V N-Channel Shielded Gate PowerTrench MOSFET |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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FDMS86202ET120 | Виробник : ON Semiconductor |
на замовлення 2980 шт: термін постачання 14-28 дні (днів) |
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FDMS86202ET120 | Виробник : ON Semiconductor | Trans MOSFET N-CH 120V 13.5A 8-Pin PQFN EP T/R |
товар відсутній |
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FDMS86202ET120 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power56 On-state resistance: 13.2mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 538A Power dissipation: 187W Gate charge: 64nC Polarisation: unipolar Drain current: 72A Kind of channel: enhanced Drain-source voltage: 120V кількість в упаковці: 1 шт |
товар відсутній |
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FDMS86202ET120 | Виробник : onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V |
товар відсутній |
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FDMS86202ET120 | Виробник : onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V |
товар відсутній |
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FDMS86202ET120 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power56 On-state resistance: 13.2mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 538A Power dissipation: 187W Gate charge: 64nC Polarisation: unipolar Drain current: 72A Kind of channel: enhanced Drain-source voltage: 120V |
товар відсутній |