FDMT800100DC onsemi
Виробник: onsemiDescription: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 286.81 грн |
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Технічний опис FDMT800100DC onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc), Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V.
Інші пропозиції FDMT800100DC за ціною від 276.61 грн до 686.19 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDMT800100DC | Виробник : onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
на замовлення 4803 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | Виробник : onsemi / Fairchild |
MOSFET FET 100V 2.95 MOHM PQFN88 |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
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| FDMT800100DC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 100V Drain current: 102A On-state resistance: 5.39mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 111nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 989A Case: DFNW8 кількість в упаковці: 1 шт |
товар відсутній |
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| FDMT800100DC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 100V Drain current: 102A On-state resistance: 5.39mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 111nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 989A Case: DFNW8 |
товар відсутній |