FDMT800120DC-22897 onsemi

Description: FET 120V 4.2 MOHM PQFN88, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-Dual Cool™88, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).