FDP039N08B-F102 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 80V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 67+ | 318.22 грн |
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Технічний опис FDP039N08B-F102 Fairchild Semiconductor
Description: MOSFET N-CH 80V 120A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Інші пропозиції FDP039N08B-F102 за ціною від 263.36 грн до 608.24 грн
| Фото | Назва | Виробник | Інформація |
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FDP039N08B-F102 | Виробник : onsemi / Fairchild |
MOSFETs Hi Intg PWM contrlr Green-Mode |
на замовлення 746 шт: термін постачання 21-30 дні (днів) |
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FDP039N08B-F102 | Виробник : onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 418 шт: термін постачання 21-31 дні (днів) |
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