Технічний опис FDP150N10 ON Semiconductor
Description: MOSFET N-CH 100V 57A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V.
Інші пропозиції FDP150N10
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
FDP150N10 | onsemi |
 Description: MOSFET N-CH 100V 57A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
FDP150N10 | onsemi |
MOSFETs 100V N-Channel PowerTrench |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| FDP150N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| FDP150N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDP150N10 |
|
Виробник: onsemi
MOSFETs 100V N-Channel PowerTrench
MOSFETs 100V N-Channel PowerTrench
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| FDP150N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.