Технічний опис FDP2710-F085 ON Semiconductor
Description: MOSFET N-CH 250V 4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FDP2710-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDP2710-F085 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 250V 50A Automotive 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
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FDP2710-F085 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 250V 4A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 |
товару немає в наявності |
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FDP2710_F085 | Виробник : Fairchild Semiconductor |
Description: 4A, 250V, 0.047OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V |
товару немає в наявності |
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FDP2710-F085 | Виробник : onsemi |
Description: MOSFET N-CH 250V 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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FDP2710-F085 | Виробник : onsemi / Fairchild |
MOSFETs 250V NCHAN PwrTrench |
товару немає в наявності |