| Кількість | Ціна |
|---|---|
| 2+ | 260.37 грн |
| 10+ | 174.27 грн |
| 50+ | 131.56 грн |
| 100+ | 128.81 грн |
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Технічний опис FDP2710 onsemi / Fairchild
Description: MOSFET N-CH 250V 50A TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 260W (Tc), Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V.
Інші пропозиції FDP2710 за ціною від 163.83 грн до 300.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDP2710 | onsemi |
 Description: MOSFET N-CH 250V 50A TO220-3Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
|
| FDP2710 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Description: MOSFET N-CH 250V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 300.66 грн |
| 50+ | 229.13 грн |
| 100+ | 196.39 грн |
| 500+ | 163.83 грн |