| Кількість | Ціна |
|---|---|
| 1+ | 469.53 грн |
| 10+ | 396.36 грн |
| 25+ | 312.94 грн |
| 100+ | 286.86 грн |
| 250+ | 270.65 грн |
| 500+ | 253.74 грн |
| 800+ | 227.66 грн |
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Технічний опис FDP2D9N12C onsemi
Description: PTNG 120V N-FET TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 2.4W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 686µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V.
Інші пропозиції FDP2D9N12C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
FDP2D9N12C | onsemi |
 Description: PTNG 120V N-FET TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 686µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V |
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| FDP2D9N12C |
|
Виробник: onsemi
Description: PTNG 120V N-FET TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 686µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
Description: PTNG 120V N-FET TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 686µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
товару немає в наявності
В кошику
од. на суму грн.