| Кількість | Ціна |
|---|---|
| 2+ | 177.60 грн |
| 10+ | 102.18 грн |
| 100+ | 64.54 грн |
| 500+ | 51.94 грн |
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Технічний опис FDP3652 onsemi / Fairchild
Description: MOSFET N-CH 100V 9A/61A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції FDP3652 за ціною від 51.44 грн до 189.85 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FDP3652 | onsemi |
 Description: MOSFET N-CH 100V 9A/61A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
|
| FDP3652 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 9A/61A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 9A/61A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 189.85 грн |
| 10+ | 99.77 грн |
| 100+ | 73.59 грн |
| 800+ | 57.38 грн |
| 1600+ | 53.41 грн |
| 2400+ | 51.44 грн |