Технічний опис FDP8874 FAIRCHIL
Description: POWER FIELD-EFFECT TRANSISTOR, 8, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 114A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Інші пропозиції FDP8874
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FDP8874 | Виробник : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 8Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 114A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
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FDP8874 | Виробник : onsemi / Fairchild |
MOSFET 30V 114A 5.3 OHM N-CH |
товару немає в наявності |