FDPC1012S-P ONSEMI
Виробник: ONSEMI
Description: ONSEMI - FDPC1012S-P - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис FDPC1012S-P ONSEMI
Description: POWERTRENCH POWER CLIP 25V ASYME, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W (Ta), 2W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V, Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA, Supplier Device Package: Powerclip-33.
Інші пропозиції FDPC1012S-P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| FDPC1012S-P | onsemi |
Description: POWERTRENCH POWER CLIP 25V ASYME Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Ta), 2W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 |
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В кошику од. на суму грн. | |
| FDPC1012S-P | onsemi |
onsemi |
товару немає в наявності |
В кошику од. на суму грн. |
| FDPC1012S-P |
|
Виробник: onsemi
Description: POWERTRENCH POWER CLIP 25V ASYME
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta), 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Description: POWERTRENCH POWER CLIP 25V ASYME
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta), 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
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