Інші пропозиції FDPC5030SG за ціною від 38.43 грн до 137.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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FDPC5030SG | ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8 Power dissipation: 23/25W Gate charge: 17/39nC Polarisation: unipolar Drain current: 56/84A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20/±12V Kind of package: reel; tape Semiconductor structure: asymmetric Case: PQFN8 On-state resistance: 5/2.4mΩ Mounting: SMD |
на замовлення 2986 шт: термін постачання 14-30 дні (днів) |
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FDPC5030SG | onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDPC5030SG | onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
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FDPC5030SG | onsemi |
MOSFETs PT8+ N & PT8 N |
на замовлення 3848 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| FDPC5030SG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Power dissipation: 23/25W
Gate charge: 17/39nC
Polarisation: unipolar
Drain current: 56/84A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Semiconductor structure: asymmetric
Case: PQFN8
On-state resistance: 5/2.4mΩ
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Power dissipation: 23/25W
Gate charge: 17/39nC
Polarisation: unipolar
Drain current: 56/84A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Semiconductor structure: asymmetric
Case: PQFN8
On-state resistance: 5/2.4mΩ
Mounting: SMD
на замовлення 2986 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.17 грн |
| 10+ | 63.15 грн |
| 100+ | 54.84 грн |
| 500+ | 49.86 грн |
| 1000+ | 46.53 грн |
| FDPC5030SG |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 38.43 грн |
| FDPC5030SG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
на замовлення 7980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.46 грн |
| 10+ | 84.73 грн |
| 100+ | 57.32 грн |
| 500+ | 42.78 грн |
| 1000+ | 40.42 грн |
| FDPC5030SG |
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Виробник: onsemi
MOSFETs PT8+ N & PT8 N
MOSFETs PT8+ N & PT8 N
на замовлення 3848 шт:
термін постачання 21-30 дні (днів)