FDPC8014AS Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: MOSFET 2N-CH 25V 20A PWRCLIP56
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.3W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
на замовлення 2043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 228+ | 87.09 грн |
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Технічний опис FDPC8014AS Fairchild Semiconductor
Description: MOSFET 2N-CH 25V 20A PWRCLIP56, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, 2.3W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20A, 40A, Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Power Clip 56, Part Status: Active.
Інші пропозиції FDPC8014AS
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FDPC8014AS | Виробник : ON Semiconductor / Fairchild |
MOSFET PT9 N 30/12 & PT9 N 25/12S inPowerClip56 |
на замовлення 623 шт: термін постачання 21-30 дні (днів) |
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FDPC8014AS | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 20A PWRCLIP56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.3W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 40A Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Power Clip 56 |
товар відсутній |
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FDPC8014AS | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 20A PWRCLIP56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.3W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 40A Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Power Clip 56 |
товар відсутній |