| Кількість | Ціна |
|---|---|
| 3+ | 136.05 грн |
| 10+ | 133.30 грн |
| 250+ | 107.53 грн |
| 500+ | 97.76 грн |
| 1000+ | 55.58 грн |
| 2000+ | 54.88 грн |
| 5000+ | 54.40 грн |
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Технічний опис FDPF12N50UT onsemi / Fairchild
Description: MOSFET N-CH 500V 10A TO220F, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V.
Інші пропозиції FDPF12N50UT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FDPF12N50UT | Виробник : onsemi |
 Description: MOSFET N-CH 500V 10A TO220FVgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V |
товару немає в наявності |