Технічний опис FDPF13N50NZ ON Semiconductor / Fairchild
Description: 1-ELEMENT, N-CHANNEL, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Part Status: Active, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10.
Інші пропозиції FDPF13N50NZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
FDPF13N50NZ | Fairchild Semiconductor |
Description: 1-ELEMENT, N-CHANNEL Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
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В кошику од. на суму грн. |
| FDPF13N50NZ |
Виробник: Fairchild Semiconductor
Description: 1-ELEMENT, N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Description: 1-ELEMENT, N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
товару немає в наявності
В кошику
од. на суму грн.



