FDPF52N20T

FDPF52N20T ON Semiconductor


4263111919622889fdp52n20-d.pdf Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 52A 3-Pin(3+Tab) TO-220F Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис FDPF52N20T ON Semiconductor

Description: MOSFET N-CH 200V 52A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.

Інші пропозиції FDPF52N20T

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
FDPF52N20T FDPF52N20T Виробник : onsemi FDP52N20,%20FDPF52N20T.pdf Description: MOSFET N-CH 200V 52A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
товар відсутній
FDPF52N20T FDPF52N20T Виробник : onsemi / Fairchild fdpf52n20t-1192166.pdf MOSFET 200V N-Channel
товар відсутній