Технічний опис FDR842P FAIRCHILD
Description: MOSFET P-CH 12V 11A SUPERSOT8, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-LSOP (0.130", 3.30mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SuperSOT™-8, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: P-Channel.
Інші пропозиції FDR842P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FDR842P | Виробник : onsemi |
Description: MOSFET P-CH 12V 11A SUPERSOT8Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-LSOP (0.130", 3.30mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SuperSOT™-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: P-Channel |
товару немає в наявності |

