FDS2070N3 Fairchild Semiconductor

Description: MOSFET N-CH 150V 4.1A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1884 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.