FDS2672-F085 onsemi

Description: MOSFET N-CH 200V 3.9A 8SOIC, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).