FDS4672A onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 2500+ | 21.92 грн |
| 5000+ | 19.49 грн |
| 7500+ | 18.67 грн |
| 12500+ | 16.66 грн |
| 17500+ | 16.60 грн |
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Технічний опис FDS4672A onsemi
Description: MOSFET N-CH 40V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V.
Інші пропозиції FDS4672A за ціною від 18.64 грн до 97.64 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 21mΩ Power dissipation: 2.5W Drain current: 11A Gate-source voltage: ±12V Drain-source voltage: 40V Polarisation: unipolar |
на замовлення 2160 шт: термін постачання 14-30 дні (днів) |
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FDS4672A | onsemi |
Description: MOSFET N-CH 40V 11A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 39925 шт: термін постачання 21-31 дні (днів) |
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FDS4672A | onsemi / Fairchild |
MOSFETs SO-8 |
на замовлення 4213 шт: термін постачання 21-30 дні (днів) |
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| FDS4672A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
на замовлення 2160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 79.31 грн |
| 10+ | 53.33 грн |
| FDS4672A |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 39925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.86 грн |
| 10+ | 50.97 грн |
| 100+ | 33.59 грн |
| 500+ | 24.51 грн |
| 1000+ | 22.25 грн |
| FDS4672A |
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Виробник: onsemi / Fairchild
MOSFETs SO-8
MOSFETs SO-8
на замовлення 4213 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 97.64 грн |
| 10+ | 60.09 грн |
| 100+ | 34.53 грн |
| 500+ | 25.04 грн |
| 1000+ | 22.64 грн |
| 2500+ | 22.08 грн |
| 5000+ | 18.64 грн |