Технічний опис FDS4780 FAIRCHILD
Description: MOSFET N-CH 40V 10.8A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції FDS4780
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
FDS4780 | Виробник : onsemi |
Description: MOSFET N-CH 40V 10.8A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10.8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |

