Технічний опис FDS5682 FAIRCHIL
Description: MOSFET N-CH 60V 7.5A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції FDS5682
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDS5682 | Виробник : onsemi |
Description: MOSFET N-CH 60V 7.5A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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FDS5682 | Виробник : onsemi / Fairchild |
MOSFET 60V N-CH. FET 20 MO SO8 TR |
товару немає в наявності |


