FDS6299S Fairchild Semiconductor

Description: MOSFET N-CH 30V 21A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).