FDS6676AS-G onsemi
Виробник: onsemi
Description: 30V N-CHANNEL POWERTRENCH SYNCFE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V
Description: 30V N-CHANNEL POWERTRENCH SYNCFE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V
на замовлення 24005 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
893+ | 44.57 грн |
Відгуки про товар
Написати відгук
Технічний опис FDS6676AS-G onsemi
Description: 30V N-CHANNEL POWERTRENCH SYNCFE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOIC, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V.
Інші пропозиції FDS6676AS-G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
FDS6676AS-G | Виробник : onsemi |
![]() |
товару немає в наявності |