| Кількість | Ціна |
|---|---|
| 4+ | 82.13 грн |
| 10+ | 69.57 грн |
| 100+ | 51.23 грн |
| 500+ | 44.89 грн |
| 1000+ | 37.15 грн |
| 2500+ | 34.85 грн |
| 5000+ | 33.25 грн |
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Технічний опис FDS6875 onsemi / Fairchild
Description: MOSFET 2P-CH 20V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції FDS6875 за ціною від 37.44 грн до 94.09 грн
| Фото | Назва | Виробник | Інформація |
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FDS6875 | Виробник : onsemi |
Description: MOSFET 2P-CH 20V 6A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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FDS6875 | Виробник : onsemi |
Description: MOSFET 2P-CH 20V 6A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |

