FDS6982AS_G onsemi

Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1250pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).