FDS6986AS onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 27.43 грн |
| 5000+ | 24.50 грн |
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Технічний опис FDS6986AS onsemi
Description: MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції FDS6986AS за ціною від 27.70 грн до 101.93 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||||
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FDS6986AS | Виробник : Fairchild Semiconductor |
Description: MOSFET 2N-CH 30V 6.5A/7.9A 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 3700 шт: термін постачання 21-31 дні (днів) |
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FDS6986AS | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 6.5A/7.9A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 7274 шт: термін постачання 21-31 дні (днів) |
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| FDS6986AS | Виробник : FAIRCHILD |
09+ |
на замовлення 40018 шт: термін постачання 14-28 дні (днів) |
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FDS6986AS | Виробник : onsemi / Fairchild |
MOSFETs 30V Dual SyncFET |
товару немає в наявності |

