FDS8447 ON-Semiconductor
Виробник: ON-Semiconductor
Transistor N-Channel MOSFET; 40V; 20V; 15mOhm; 12,8A; 2,5W; -55°C ~ 150°C; FDS8447 TFDS8447
кількість в упаковці: 25 шт
на замовлення 40 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 30.13 грн |
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Технічний опис FDS8447 ON-Semiconductor
Description: MOSFET N-CH 40V 12.8A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції FDS8447 за ціною від 36.64 грн до 107.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FDS8447 | onsemi |
 Description: MOSFET N-CH 40V 12.8A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDS8447 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 49nC On-state resistance: 15mΩ Power dissipation: 2.5W Drain current: 12.8A Gate-source voltage: ±20V Drain-source voltage: 40V Kind of package: reel; tape |
на замовлення 1585 шт: термін постачання 14-30 дні (днів) |
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FDS8447 | onsemi |
Description: MOSFET N-CH 40V 12.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 12452 шт: термін постачання 21-31 дні (днів) |
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FDS8447 | onsemi / Fairchild |
MOSFET 40V Single N-Channel PowerTrench MOSFET |
на замовлення 26074 шт: термін постачання 21-30 дні (днів) |
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| FDS8447 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 42.88 грн |
| 5000+ | 39.33 грн |
| FDS8447 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 15mΩ
Power dissipation: 2.5W
Drain current: 12.8A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 15mΩ
Power dissipation: 2.5W
Drain current: 12.8A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of package: reel; tape
на замовлення 1585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 88.40 грн |
| 7+ | 67.99 грн |
| 10+ | 60.53 грн |
| 25+ | 59.70 грн |
| FDS8447 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 12452 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 81.71 грн |
| 100+ | 63.53 грн |
| 500+ | 50.53 грн |
| 1000+ | 41.17 грн |
| FDS8447 |
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Виробник: onsemi / Fairchild
MOSFET 40V Single N-Channel PowerTrench MOSFET
MOSFET 40V Single N-Channel PowerTrench MOSFET
на замовлення 26074 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.68 грн |
| 10+ | 85.55 грн |
| 100+ | 58.07 грн |
| 500+ | 49.25 грн |
| 1000+ | 38.64 грн |
| 2500+ | 37.54 грн |
| 5000+ | 36.64 грн |