FDS8813NZ onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 18.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4145 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2500+ | 43.29 грн |
| 5000+ | 40.25 грн |
Відгуки про товар
Написати відгук
Технічний опис FDS8813NZ onsemi
Description: MOSFET N-CH 30V 18.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4145 pF @ 15 V.
Інші пропозиції FDS8813NZ за ціною від 38.11 грн до 151.28 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDS8813NZ | Виробник : onsemi / Fairchild |
MOSFET 30 Volt N-Ch PowerTrench MOSFET |
на замовлення 2643 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
FDS8813NZ | Виробник : onsemi |
Description: MOSFET N-CH 30V 18.5A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4145 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.5A, 10V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 40892 шт: термін постачання 21-31 дні (днів) |
|