FDS8842NZ onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 14.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2500+ | 24.97 грн |
| 5000+ | 22.27 грн |
| 7500+ | 21.36 грн |
| 12500+ | 19.49 грн |
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Технічний опис FDS8842NZ onsemi
Description: MOSFET N-CH 40V 14.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V.
Інші пропозиції FDS8842NZ за ціною від 21.75 грн до 81.23 грн
| Фото | Назва | Виробник | Інформація |
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FDS8842NZ | Виробник : onsemi / Fairchild |
MOSFETs 40V NCh PowerTrench w/MOSFET |
на замовлення 4835 шт: термін постачання 21-30 дні (днів) |
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FDS8842NZ | Виробник : onsemi |
Description: MOSFET N-CH 40V 14.9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |