| Кількість | Ціна |
|---|---|
| 6+ | 61.80 грн |
| 10+ | 54.02 грн |
| 100+ | 39.03 грн |
| 500+ | 30.88 грн |
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Технічний опис FDU3N40TU onsemi / Fairchild
Description: MOSFET N-CH 400V 2A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції FDU3N40TU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FDU3N40TU | Виробник : onsemi |
 Description: MOSFET N-CH 400V 2A IPAKInput Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |