FDU7030BL Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 14A/56A IPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 319+ | 63.16 грн |
Відгуки про товар
Написати відгук
Технічний опис FDU7030BL Fairchild Semiconductor
Description: MOSFET N-CH 30V 14A/56A IPAK, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc), FET Type: N-Channel.