FDW264P ONSEMI

Description: MOSFET P-CH 20V 9.7A 8TSSOP, Input Capacitance (Ciss) (Max) @ Vds: 7225 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).