на замовлення 2870 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.51 грн |
| 10+ | 202.94 грн |
| 25+ | 166.48 грн |
| 100+ | 143.18 грн |
| 250+ | 135.18 грн |
| 500+ | 127.19 грн |
| 1000+ | 108.55 грн |
Відгуки про товар
Написати відгук
Технічний опис FDWS86068-F085 onsemi
Description: MOSFET N-CH 100V 80A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5.1x6.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V.
Інші пропозиції FDWS86068-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FDWS86068-F085 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 100V 80A Automotive 8-Pin DFN EP T/R |
товар відсутній |
|
 |
FDWS86068-F085 | Виробник : onsemi |
Description: MOSFET N-CH 100V 80A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V |
товар відсутній |
|
|
|
FDWS86068-F085 | Виробник : onsemi |
Description: MOSFET N-CH 100V 80A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V |
товар відсутній |