FDWS86068-F085 onsemi
Виробник: onsemi
Description: MOSFET N-CH 100V 80A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис FDWS86068-F085 onsemi
Description: MOSFET N-CH 100V 80A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-DFN (5.1x6.3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 214W (Ta), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції FDWS86068-F085 за ціною від 120.41 грн до 352.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDWS86068-F085 | onsemi |
Description: MOSFET N-CH 100V 80A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 12715 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
FDWS86068-F085 | onsemi |
MOSFETs 80V N-Chnl Power Trench MOSFET |
на замовлення 5500 шт: термін постачання 329-338 дні (днів) |
|
| FDWS86068-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Qualification: AEC-Q101
на замовлення 12715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 308.45 грн |
| 10+ | 196.08 грн |
| 100+ | 138.84 грн |
| 500+ | 120.41 грн |
| FDWS86068-F085 |
![]() |
Виробник: onsemi
MOSFETs 80V N-Chnl Power Trench MOSFET
MOSFETs 80V N-Chnl Power Trench MOSFET
на замовлення 5500 шт:
термін постачання 329-338 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 352.77 грн |
| 10+ | 239.92 грн |
| 100+ | 145.19 грн |


