Технічний опис FDZ191P onsemi / Fairchild
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20, Dauer-Drainstrom Id: 3, hazardous: false, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 1.9, Gate-Source-Schwellenspannung, max.: 600, euEccn: NLR, Verlustleistung: 1.9, Bauform - Transistor: WL-CSP, Anzahl der Pins: 6, Produktpalette: -, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.067, Rds(on)-Prüfspannung: 4.5, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.067, SVHC: No SVHC (17-Jan-2022).
Інші пропозиції FDZ191P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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FDZ191P | onsemi |
 Description: MOSFET P-CH 20V 3A 6WLCSPInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 6-WLCSP (1x1.5) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
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FDZ191P | onsemi |
Description: MOSFET P-CH 20V 3A 6WLCSP Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 6-WLCSP (1x1.5) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
FDZ191P | ONSEMI |
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 3 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1.9 Gate-Source-Schwellenspannung, max.: 600 euEccn: NLR Verlustleistung: 1.9 Bauform - Transistor: WL-CSP Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.067 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.067 SVHC: No SVHC (17-Jan-2022) |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
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FDZ191P | ONSEMI |
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage tariffCode: 85412900 Verlustleistung: 1.9 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.067 Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2022) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| FDZ191P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 3A 6WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDZ191P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 3A 6WLCSP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
товару немає в наявності
В кошику
од. на суму грн.
| FDZ191P |
|
Виробник: ONSEMI
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 3
hazardous: false
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 1.9
Gate-Source-Schwellenspannung, max.: 600
euEccn: NLR
Verlustleistung: 1.9
Bauform - Transistor: WL-CSP
Anzahl der Pins: 6
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.067
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.067
SVHC: No SVHC (17-Jan-2022)
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 3
hazardous: false
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 1.9
Gate-Source-Schwellenspannung, max.: 600
euEccn: NLR
Verlustleistung: 1.9
Bauform - Transistor: WL-CSP
Anzahl der Pins: 6
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.067
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.067
SVHC: No SVHC (17-Jan-2022)
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| FDZ191P |
|
Виробник: ONSEMI
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage
tariffCode: 85412900
Verlustleistung: 1.9
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.067
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2022)
Description: ONSEMI - FDZ191P - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.067 ohm, WL-CSP, Oberflächenmontage
tariffCode: 85412900
Verlustleistung: 1.9
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.067
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2022)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.