FDZ375P Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET P-CH 20V 3.7A 4WLCSP
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (1x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис FDZ375P Fairchild Semiconductor
Description: MOSFET P-CH 20V 3.7A 4WLCSP, Mounting Type: Surface Mount, Package / Case: 4-XFBGA, WLCSP, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 4-WLCSP (1x1), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції FDZ375P за ціною від 118.78 грн до 118.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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FDZ375P | onsemi |
Description: MOSFET P-CH 20V 3.7A 4WLCSP Packaging: Bulk Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-WLCSP (1x1) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V |
на замовлення 5119 шт: термін постачання 21-31 дні (днів) |
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FDZ375P | ON Semiconductor / Fairchild |
MOSFET 20V P-Channel 1.5V Specfied PowerTrench |
на замовлення 4315 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| FDZ375P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.7A 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-WLCSP (1x1)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-WLCSP (1x1)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
на замовлення 5119 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 181+ | 118.78 грн |
| FDZ375P |
|
Виробник: ON Semiconductor / Fairchild
MOSFET 20V P-Channel 1.5V Specfied PowerTrench
MOSFET 20V P-Channel 1.5V Specfied PowerTrench
на замовлення 4315 шт:
термін постачання 21-30 дні (днів)