FEPB16DT-E3/45 Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 3+ | 128.43 грн |
| 10+ | 114.58 грн |
| 100+ | 80.12 грн |
| 500+ | 65.49 грн |
| 1000+ | 51.07 грн |
| 2000+ | 49.61 грн |
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Технічний опис FEPB16DT-E3/45 Vishay General Semiconductor
Description: DIODE ARRAY GP 200V 8A TO263AB, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io) (per Diode): 8A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 200 V.
Інші пропозиції FEPB16DT-E3/45
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FEPB16DT-E3/45 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARRAY GP 200V 8A TO263ABOperating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V |
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