FESB16GT-E3/81 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 800+ | 69.94 грн |
| 1600+ | 57.15 грн |
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Технічний опис FESB16GT-E3/81 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції FESB16GT-E3/81 за ціною від 50.00 грн до 141.12 грн
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FESB16GT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1935 шт: термін постачання 21-31 дні (днів) |
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FESB16GT-E3/81 | Vishay General Semiconductor |
Rectifiers 400 Volt 16 Amp 50ns Single |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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| FESB16GT-E3/81 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.00 грн |
| 10+ | 99.96 грн |
| 100+ | 79.60 грн |
| FESB16GT-E3/81 |
|
Виробник: Vishay General Semiconductor
Rectifiers 400 Volt 16 Amp 50ns Single
Rectifiers 400 Volt 16 Amp 50ns Single
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.12 грн |
| 10+ | 97.05 грн |
| 25+ | 83.69 грн |
| 100+ | 64.63 грн |
| 250+ | 62.17 грн |
| 500+ | 53.24 грн |
| 800+ | 50.00 грн |