Технічний опис FF1000UXTR23T2M1BPSA1 Infineon Technologies
Description: INFINEON - FF1000UXTR23T2M1BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 1.33 kA, 2.3 kV, 0.00119 ohm, Modul, tariffCode: 85412900, euEccn: 3A228.c, Drain-Source-Spannung Vds: 2.3kV, rohsCompliant: YES, Dauer-Drainstrom Id: 1.33kA, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5.15V, MOSFET-Modul-Konfiguration: Halbbrücke, Verlustleistung: -, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: Modul, Anzahl der Pins: 15Pin(s), Produktpalette: XHP 2 Series, productTraceability: Yes-Date/Lot Code, usEccn: 3A228.c, Kanaltyp: Zweifach n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 15V, Drain-Source-Durchgangswiderstand: 0.00119ohm.
Інші пропозиції FF1000UXTR23T2M1BPSA1 за ціною від 238336.16 грн до 258447.79 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FF1000UXTR23T2M1BPSA1 | INFINEON |
 Description: INFINEON - FF1000UXTR23T2M1BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 1.33 kA, 2.3 kV, 0.00119 ohm, ModultariffCode: 85412900 euEccn: 3A228.c Drain-Source-Spannung Vds: 2.3kV rohsCompliant: YES Dauer-Drainstrom Id: 1.33kA hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.15V MOSFET-Modul-Konfiguration: Halbbrücke Verlustleistung: - SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: Modul Anzahl der Pins: 15Pin(s) Produktpalette: XHP 2 Series productTraceability: Yes-Date/Lot Code usEccn: 3A228.c Kanaltyp: Zweifach n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 15V Drain-Source-Durchgangswiderstand: 0.00119ohm |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| FF1000UXTR23T2M1BPSA1 | Infineon Technologies |
Description: XHP LV Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 1.33kA Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V Gate Charge (Qg) (Max) @ Vgs: 5300nC @ 15V Vgs(th) (Max) @ Id: 5.15V @ 900mA Supplier Device Package: AG-XHP2K17 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| FF1000UXTR23T2M1BPSA1 |
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Виробник: INFINEON
Description: INFINEON - FF1000UXTR23T2M1BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 1.33 kA, 2.3 kV, 0.00119 ohm, Modul
tariffCode: 85412900
euEccn: 3A228.c
Drain-Source-Spannung Vds: 2.3kV
rohsCompliant: YES
Dauer-Drainstrom Id: 1.33kA
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.15V
MOSFET-Modul-Konfiguration: Halbbrücke
Verlustleistung: -
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: Modul
Anzahl der Pins: 15Pin(s)
Produktpalette: XHP 2 Series
productTraceability: Yes-Date/Lot Code
usEccn: 3A228.c
Kanaltyp: Zweifach n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.00119ohm
Description: INFINEON - FF1000UXTR23T2M1BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 1.33 kA, 2.3 kV, 0.00119 ohm, Modul
tariffCode: 85412900
euEccn: 3A228.c
Drain-Source-Spannung Vds: 2.3kV
rohsCompliant: YES
Dauer-Drainstrom Id: 1.33kA
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.15V
MOSFET-Modul-Konfiguration: Halbbrücke
Verlustleistung: -
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: Modul
Anzahl der Pins: 15Pin(s)
Produktpalette: XHP 2 Series
productTraceability: Yes-Date/Lot Code
usEccn: 3A228.c
Kanaltyp: Zweifach n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.00119ohm
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 258447.79 грн |
| FF1000UXTR23T2M1BPSA1 |
|
Виробник: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.33kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5300nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.33kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5300nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 238336.16 грн |